Green emission in carbon doped ZnO films | Zendy

LiTing Tseng | Zendy; Jiabao Yi | Zendy; X. Y. Zhang | Zendy; Guozhong Xing | Zendy; Haiming Fan | Zendy; Tun Seng Herng | Zendy; Xi Luo | Zendy; Mihail Ionescu | Zendy; Jun Ding | Zendy; Sean Li | Zendy

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Green emission in carbon doped ZnO films

Author(s) -

LiTing Tseng,

Jiabao Yi,

X. Y. Zhang,

Guozhong Xing,

Haiming Fan,

Tun Seng Herng,

Xi Luo,

Mihail Ionescu,

Jun Ding,

Sean Li

Publication year - 2014

Publication title -

aip advances

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.421

H-Index - 58

ISSN - 2158-3226

DOI - 10.1063/1.4882172

Subject(s) - photoluminescence , materials science , annealing (glass) , doping , electron paramagnetic resonance , analytical chemistry (journal) , optoelectronics , nuclear magnetic resonance , metallurgy , chemistry , physics , chromatography

The emission behavior of C-doped ZnO films, which were prepared by implantation of carbon into ZnO films, is investigated. Orange/red emission is observed for the films with the thickness of 60-100 nm. However, the film with thickness of 200 nm shows strong green emission. Further investigations by annealing bulk ZnO single crystals under different environments, i.e. Ar, Zn or C vapor, indicated that the complex defects based on Zn interstitials are responsible for the strong green emission. The existence of complex defects was confirmed by electron spin resonance (ESR) and low temperature photoluminescence (PL) measurement. © 2014 Author(s)

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