Open AccessAnalysis of the electrical properties of Cr/n-BaSi2 Schottky junction and n-BaSi2/p-Si heterojunction diodes for solar cell applications
Author(s) -
Weijie Du,
Masakazu Baba,
Kaoru Toko,
Kosuke O. Hara,
Kentaro Watanabe,
Takashi Sekiguchi,
Noritaka Usami,
Takashi Suemasu
Publication year - 2014
Publication title -
journal of applied physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.699
H-Index - 319
eISSN - 1089-7550
pISSN - 0021-8979
DOI - 10.1063/1.4882117
Subject(s) - homojunction , schottky diode , optoelectronics , materials science , diode , heterojunction , schottky barrier , p–n junction , metal–semiconductor junction , fermi level , depletion region , semiconductor , electron , physics , quantum mechanics
Current status and future prospects towards BaSi2 pn junction solar cells are presented. As a preliminary step toward the formation of BaSi2 homojunction diodes, diodes with a Cr/n-BaSi2 Schottky junction and an n-BaSi2/p-Si hetero-junction have been fabricated to investigate the electrical properties of the n-BaSi2. Clear rectifying properties were observed in the current density versus voltage characteristics in both diodes. From the capacitance-voltage measurements, the build-in potential, V D, was 0.53 V in the Cr/n-BaSi2 Schottky junction diode, and the Schottky barrier height was 0.73 eV calculated from the thermoionic emission theory; the V D was about 1.5 V in the n-BaSi2/p-Si hetero-junction diode, which was consistent with the difference in the Fermi level between the n-BaSi2 and the p-Si
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