Open AccessSubthreshold-swing physics of tunnel field-effect transistors
Author(s) -
Wei Cao,
Deblina Sarkar,
Yasin Khatami,
Jiahao Kang,
Kaustav Banerjee
Publication year - 2014
Publication title -
aip advances
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.421
H-Index - 58
ISSN - 2158-3226
DOI - 10.1063/1.4881979
Subject(s) - subthreshold swing , transistor , subthreshold conduction , field effect transistor , swing , physics , field (mathematics) , degradation (telecommunications) , optoelectronics , semiconductor , engineering physics , nanotechnology , materials science , electrical engineering , engineering , quantum mechanics , voltage , acoustics , pure mathematics , mathematics
Band-to-band tunnel field-effect-transistors (TFETs) are considered a possible replacement for the conventional metal-oxide-semiconductor field-effect transistors due to their ability to achieve subthreshold swing (SS) below 60 mV/decade. This letter reports a comprehensive study of the SS of TFETs by examining the effects of electrostatics and material parameters of TFETs on their SS through a physics based analytical model. Based on the analysis, an intrinsic SS degradation effect in TFETs is uncovered. Meanwhile, it is also shown that designing a strong onset condition, quantified by an introduced concept - “onset strength”, for TFETs can effectively overcome this degradation at the onset stage, and thereby achieve ultra-sharp switching characteristics. The uncovered physics provides theoretical support to recent experimental results, and forward looking insight into more advanced TFET design
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