Positive magnetoresistance in ferromagnetic Nd-doped In2O3 thin films grown by pulse laser deposition | Zendy

Guozhong Xing | Zendy; Jiabao Yi | Zendy; Fanfan Yan | Zendy; Tom Wu | Zendy; S. Li | Zendy

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Positive magnetoresistance in ferromagnetic Nd-doped In₂O₃ thin films grown by pulse laser deposition

Author(s) -

Guozhong Xing,

Jiabao Yi,

Fanfan Yan,

Tom Wu,

S. Li

Publication year - 2014

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.4879463

Subject(s) - pulsed laser deposition , magnetoresistance , ferromagnetism , condensed matter physics , thin film , materials science , magnetization , doping , zeeman effect , magnetic hysteresis , hysteresis , magnetic domain , exchange interaction , giant magnetoresistance , deposition (geology) , magnetic field , nanotechnology , physics , paleontology , sediment , biology , quantum mechanics

We report the magnetic and magnetotransport properties of (In 0.985 Nd 0.015 ) 2 O 2.89 thin films grown by pulse laser deposition. The clear magnetization hysteresis loops with the complementary magnetic domain structure reveal the intrinsic room temperature ferromagnetism in the as-prepared films. The strong sp-f exchange interaction as a result of the rare earth doping is discussed as the origin of the magnetotransport behaviours. A positive magnetoresistance (∼29.2%) was observed at 5 K and ascribed to the strong ferromagnetic sp-f exchange interaction in (In 0.985 Nd 0.015 ) 2 O 2.89 thin films due to a large Zeeman splitting in an external magnetic field of 50 KOe. © 2014 AIP Publishing LLC

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