Open AccessTopological crystalline insulator PbxSn1-xTe thin films on SrTiO3 (001) with tunable Fermi levels
Author(s) -
Huaming Guo,
Chenhui Yan,
Junwei Liu,
Zhenyu Wang,
Rui Wu,
Zhidong Zhang,
Lili Wang,
Ke He,
Xucun Ma,
ShuaiHua Ji,
Wenhui Duan,
Xi Chen,
QiKun Xue
Publication year - 2014
Publication title -
apl materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.571
H-Index - 60
ISSN - 2166-532X
DOI - 10.1063/1.4876637
Subject(s) - angle resolved photoemission spectroscopy , materials science , topological insulator , thin film , fermi level , molecular beam epitaxy , photoemission spectroscopy , scanning tunneling microscope , condensed matter physics , band gap , fermi energy , epitaxy , x ray photoelectron spectroscopy , topology (electrical circuits) , electronic structure , optoelectronics , nanotechnology , physics , nuclear magnetic resonance , electron , mathematics , quantum mechanics , layer (electronics) , combinatorics
In this letter, we report a systematic study of topological crystalline insulator PbxSn1-xTe (0 < x < 1) thin films grown by molecular beam epitaxy on SrTiO3(001). Two domains of PbxSn1-xTe thin films with intersecting angle of α ≈ 45° were confirmed by reflection high energy diffraction, scanning tunneling microscopy, and angle-resolved photoemission spectroscopy (ARPES). ARPES study of PbxSn1-xTe thin films demonstrated that the Fermi level of PbTe could be tuned by altering the temperature of substrate whereas SnTe cannot. An M-shaped valance band structure was observed only in SnTe but PbTe is in a topological trivial state with a large gap. In addition, co-evaporation of SnTe and PbTe results in an equivalent variation of Pb concentration as well as the Fermi level of PbxSn1-xTe thin films
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