Open AccessAnomalous diffusion of Ga and As from semi-insulating GaAs substrate into MOCVD grown ZnO films as a function of annealing temperature and its effect on charge compensation
Author(s) -
P. Biswas,
Nripendra N. Halder,
Souvik Kundu,
P. Banerji,
T. Shripathi,
Manisha Gupta
Publication year - 2014
Publication title -
aip advances
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.421
H-Index - 58
ISSN - 2158-3226
DOI - 10.1063/1.4876236
Subject(s) - annealing (glass) , materials science , x ray photoelectron spectroscopy , acceptor , gallium , analytical chemistry (journal) , conductivity , metalorganic vapour phase epitaxy , ultraviolet photoelectron spectroscopy , charge carrier , band gap , optoelectronics , condensed matter physics , chemistry , nanotechnology , epitaxy , nuclear magnetic resonance , metallurgy , physics , chromatography , layer (electronics)
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