Continuously-tuned tunneling behaviors of ferroelectric tunnel junctions based on BaTiO3/La0.67Sr0.33MnO3 heterostructure | Zendy

Xin Ou | Zendy; Bo Xu | Zendy; Changjie Gong | Zendy; Xuexin Lan | Zendy; Qiaonan Yin | Zendy; Yidong Xia | Zendy; Jiang Yin | Zendy; Zhiguo Liu | Zendy

Open Access

Continuously-tuned tunneling behaviors of ferroelectric tunnel junctions based on BaTiO3/La0.67Sr0.33MnO3 heterostructure

Author(s) -

Xin Ou,

Bo Xu,

Changjie Gong,

Xuexin Lan,

Qiaonan Yin,

Yidong Xia,

Jiang Yin,

Zhiguo Liu

Publication year - 2014

Publication title -

aip advances

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.421

H-Index - 58

ISSN - 2158-3226

DOI - 10.1063/1.4876234

Subject(s) - materials science , quantum tunnelling , ferroelectricity , poling , piezoresponse force microscopy , heterojunction , optoelectronics , pulsed laser deposition , conductivity , tunnel junction , polarization (electrochemistry) , substrate (aquarium) , nanotechnology , condensed matter physics , thin film , dielectric , chemistry , oceanography , physics , geology

In this work, we fabricate BaTiO3/La0.67Sr0.33MnO3 (BTO/LSMO) ferroelectric tunnel junction on (001) SrTiO3 substrate by pulsed laser deposition method. Combining piezoresponse force and conductive-tip atomic force microscopy, we demonstrate robust and reproducible polarization-controlled tunneling behaviors with the resulting tunneling electroresistance value reaching about 102 in ultrathin BTO films (∼1.2 nm) at room temperature. Moreover, local poling areas with different conductivity are finally achieved by controlling the relative proportion of upward and downward domains, and different poling areas exhibit stable transport properties

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