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In this work, we fabricate BaTiO3/La0.67Sr0.33MnO3 (BTO/LSMO) ferroelectric tunnel junction on (001) SrTiO3 substrate by pulsed laser deposition method. Combining piezoresponse force and conductive-tip atomic force microscopy, we demonstrate robust and reproducible polarization-controlled tunneling behaviors with the resulting tunneling electroresistance value reaching about 102 in ultrathin BTO films (∼1.2 nm) at room temperature. Moreover, local poling areas with different conductivity are finally achieved by controlling the relative proportion of upward and downward domains, and different poling areas exhibit stable transport properties

Continuously-tuned tunneling behaviors of ferroelectric tunnel junctions based on BaTiO3/La0.67Sr0.33MnO3 heterostructure