Open AccessDC current induced metal-insulator transition in epitaxial Sm0.6Nd0.4NiO3/LaAlO3 thin film
Author(s) -
Haoliang Huang,
Zhenlin Luo,
Yuanjun Yang,
Yu Yun,
Mengmeng Yang,
Dechao Meng,
Haibo Wang,
Sixia Hu,
Jun Bao,
Yalin Lu,
Gao Chen
Publication year - 2014
Publication title -
aip advances
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.421
H-Index - 58
ISSN - 2158-3226
DOI - 10.1063/1.4874642
Subject(s) - thin film , materials science , pulsed laser deposition , epitaxy , condensed matter physics , metal–insulator transition , electrical resistivity and conductivity , phase diagram , substrate (aquarium) , current density , metal , optoelectronics , phase (matter) , nanotechnology , chemistry , electrical engineering , metallurgy , layer (electronics) , physics , oceanography , engineering , organic chemistry , quantum mechanics , geology
The metal-insulator transition (MIT) in strong correlated electron materials can be induced by external perturbation in forms of thermal, electrical, optical, or magnetic fields. We report on the DC current induced MIT in epitaxial Sm0.6Nd0.4NiO3 (SNNO) thin film deposited by pulsed laser deposition on (001)-LaAlO3 substrate. It was found that the MIT in SNNO film not only can be triggered by thermal, but also can be induced by DC current. The TMI of SNNO film decreases from 282 K to 200 K with the DC current density increasing from 0.003 × 109 A•m−2 to 4.9 × 109 A•m−2. Based on the resistivity curves measured at different temperatures, the MIT phase diagram has been successfully constructed