On the reliable analysis of indium mole fraction within InxGa1−xN quantum wells using atom probe tomography | Zendy

James R. Riley | Zendy; Theeradetch Detchprohm | Zendy; Christian Wetzel | Zendy; Lincoln J. Lauhon | Zendy

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On the reliable analysis of indium mole fraction within InxGa1−xN quantum wells using atom probe tomography

Author(s) -

James R. Riley,

Theeradetch Detchprohm,

Christian Wetzel,

Lincoln J. Lauhon

Publication year - 2014

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.4871510

Subject(s) - atom probe , quantum well , indium , crystal (programming language) , atom (system on chip) , mole fraction , evaporation , ion , plane (geometry) , materials science , atomic physics , molecular physics , chemistry , physics , crystallography , optics , geometry , microstructure , optoelectronics , quantum mechanics , embedded system , laser , computer science , programming language , mathematics , thermodynamics

Surface crystallography and polarity are shown to influence the detection probability of In, Ga, and N ions during atom probe tomography analysis of InxGa1−xN m-plane, c-plane, and (202¯1¯) quantum wells. A N deficit is observed in regions of the reconstruction generated from Ga-polar surfaces, and the probability of detecting group-III atoms is lower in InxGa1−xN quantum wells than in GaN barrier layers. Despite these artifacts, the detected In mole fraction is consistent throughout a given quantum well regardless of the crystal orientation of the quantum well or the evaporation surface from which the reconstruction was generated.

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