Ti2MnZ (Z=Al, Ga, In) compounds: Nearly spin gapless semiconductors | Zendy

Hai Jia | Zendy; Xuefang Dai | Zendy; L. Y. Wang | Zendy; R. Liu | Zendy; X. T. Wang | Zendy; P. P. Li | Zendy; Yukang Cui | Zendy; G. D. Liu | Zendy

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Ti2MnZ (Z=Al, Ga, In) compounds: Nearly spin gapless semiconductors

Author(s) -

Hai Jia,

Xuefang Dai,

L. Y. Wang,

R. Liu,

X. T. Wang,

P. P. Li,

Yukang Cui,

G. D. Liu

Publication year - 2014

Publication title -

aip advances

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.421

H-Index - 58

ISSN - 2158-3226

DOI - 10.1063/1.4871403

Subject(s) - gapless playback , condensed matter physics , band gap , spin (aerodynamics) , doping , semiconductor , magnetic semiconductor , lattice (music) , wide bandgap semiconductor , electronic band structure , materials science , physics , optoelectronics , acoustics , thermodynamics

Ti2MnZ (Z=Al, Ga, In) compounds with CuHg2Ti-type structure are predicted to have the different width of band gap in two spin channels and exhibit a nearly spin gapless semiconductivity. There are different origins of the band gap in spin-up and spin-down channels. The width of the band gap can be adjusted by changing the lattice parameter or doping congeners. These compounds are completely-compensated ferrimagnets with a zero magnetic moment

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