Electroforming-free resistive switching memory effect in transparent p-type tin monoxide | Zendy

Mrinal K. Hota | Zendy; J. A. Caraveo-Frescas | Zendy; Martyn A. McLachlan | Zendy; Husam N. Alshareef | Zendy

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Electroforming-free resistive switching memory effect in transparent p-type tin monoxide

Author(s) -

Mrinal K. Hota,

J. A. Caraveo-Frescas,

Martyn A. McLachlan,

Husam N. Alshareef

Publication year - 2014

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.4870405

Subject(s) - electroforming , tin , materials science , thermal conduction , resistive random access memory , optoelectronics , resistive touchscreen , layer (electronics) , monoxide , thin film , electrode , nanotechnology , chemistry , composite material , metallurgy , electrical engineering , engineering

We report reproducible low bias bipolar resistive switching behavior in p-type SnO thin film devices without extra electroforming steps. The experimental results show a stable resistance ratio of more than 100 times, switching cycling performance up to 180 cycles, and data retention of more than 103 s. The conduction mechanism varied depending on the applied voltage range and resistance state of the device. The memristive switching is shown to originate from a redox phenomenon at the Al/SnO interface, and subsequent formation/rupture of conducting filaments in the bulk of the SnO layer, likely involving oxygen vacancies and Sn interstitials

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