Anisotropy in the hole mobility measured along the [110] and [1¯10] orientations in a strained Ge quantum well | Zendy

A. H. A. Hassan | Zendy; R. J. H. Morris | Zendy; O. A. Mironov | Zendy; Richard Beanland | Zendy; David Walker | Zendy; Steven Huband | Zendy; A. Dobbie | Zendy; M. Myronov | Zendy; D. R. Leadley | Zendy

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Anisotropy in the hole mobility measured along the [110] and [1¯10] orientations in a strained Ge quantum well

Author(s) -

A. H. A. Hassan,

R. J. H. Morris,

O. A. Mironov,

Richard Beanland,

David Walker,

Steven Huband,

A. Dobbie,

M. Myronov,

D. R. Leadley

Publication year - 2014

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.4870392

Subject(s) - anisotropy , materials science , germanium , condensed matter physics , scattering , electron mobility , relaxation (psychology) , transmission electron microscopy , electrical resistivity and conductivity , wafer , quantum well , diffraction , surface roughness , surface finish , silicon , optics , optoelectronics , physics , nanotechnology , quantum mechanics , psychology , social psychology , laser , composite material

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