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In this work, we are using a gated Hall method for measurement of free carrier density and electron mobility in buried InGaAs quantum well metal-oxide-semiconductor field-effect-transistor channels. At room temperature, mobility over 8000 cm2/Vs is observed at ∼1.4 × 1012 cm−2. Temperature dependence of the electron mobility gives the evidence that remote Coulomb scattering dominates at electron density <2 × 1011 cm−2. Spectrum of the interface/border traps is quantified from comparison of Hall data with capacitance-voltage measurements or electrostatic modeling. Above the threshold voltage, gate control is strongly limited by fast traps that cannot be distinguished from free channel carriers just by capacitance-based methods and can be the reason for significant overestimation of channel density and underestimation of carrier mobility from transistor measurements.

Interface trap density and mobility extraction in InGaAs buried quantum well metal-oxide-semiconductor field-effect-transistors by gated Hall method