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Time dependence of the grain growth in phosphorus doped silicon thin films deposited in situ at 530 ◦C was investigated. The samples were annealed at 950 ◦C in different time intervals. The theories, which give the tn time dependent increase of grain size, cannot fit the observed data. We derived a differential equation which describes the grain growth from amorphous phase. Our experimental results and the solution of the differential equation show the effect of grain growth stagnation and even grain growth stop. The solution also comprises all the features of the result of the Monte Carlo simulation of the grain growth of purematerials

Grain growth from amorphous phase