Fundamental piezoresistive coefficients of p-type single crystalline 3C-SiC | Zendy

HoangPhuong Phan | Zendy; Dzung Viet Dao | Zendy; Philip Tanner | Zendy; Li Wang | Zendy; NamTrung Nguyen | Zendy; Yong Zhu | Zendy; Sima Dimitrijev | Zendy

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Fundamental piezoresistive coefficients of p-type single crystalline 3C-SiC

Author(s) -

HoangPhuong Phan,

Dzung Viet Dao,

Philip Tanner,

Li Wang,

NamTrung Nguyen,

Yong Zhu,

Sima Dimitrijev

Publication year - 2014

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.4869151

Subject(s) - piezoresistive effect , gauge factor , materials science , wafer , transverse plane , orientation (vector space) , strain gauge , composite material , condensed matter physics , crystallography , nanotechnology , geometry , physics , fabrication , chemistry , structural engineering , mathematics , engineering , medicine , alternative medicine , pathology

The orientation dependence of the piezoresistive effect of p-type single crystalline 3C-SiC thin film grown on a (100)Si wafer was characterized. The longitudinal, transverse gauge factors in [100] orientation, and longitudinal gauge factor in [110] orientation were found to be 5.8, 5.2, and 30.3, respectively. The fundamental piezoresistive coefficients p11, p12, and p44 of p-type 3C-SiC were obtained to be 1.5 10 11 Pa 1, 1.4 10 11 Pa 1, and 18.1 10 11 Pa 1, respectively. From these coefficients, the piezoresistive effect in any crystallographic orientation in p-type single crystalline 3C-SiC can be estimated, which is very valuable in designing micro-mechanical sensors.Griffith Sciences, Griffith School of EngineeringFull Tex

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