Neutron detection using boron gallium nitride semiconductor material | Zendy

katsuhiro atsumi | Zendy; Y. Inoue | Zendy; Hidenori Mimura | Zendy; Toru Aoki | Zendy; Takayuki Nakano | Zendy

AI Assistant Blog Pricing

Home ZAIA Blog

Open Access

Neutron detection using boron gallium nitride semiconductor material

Author(s) -

katsuhiro atsumi,

Y. Inoue,

Hidenori Mimura,

Toru Aoki,

Takayuki Nakano

Publication year - 2014

Publication title -

apl materials

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.571

H-Index - 60

ISSN - 2166-532X

DOI - 10.1063/1.4868176

Subject(s) - materials science , gallium nitride , boron nitride , neutron , wide bandgap semiconductor , semiconductor , gallium , neutron detection , optoelectronics , neutron radiation , boron , epitaxy , radiochemistry , nanotechnology , nuclear physics , layer (electronics) , chemistry , metallurgy , physics

In this study, we developed a new neutron-detection device using a boron gallium nitride (BGaN) semiconductor in which the B atom acts as a neutron converter. BGaN and gallium nitride (GaN) samples were grown by metal organic vapor phase epitaxy, and their radiation detection properties were evaluated. GaN exhibited good sensitivity to α-rays but poor sensitivity to γ-rays. Moreover, we confirmed that electrons were generated in the depletion layer under neutron irradiation. This resulted in a neutron-detection signal after α-rays were generated by the capture of neutrons by the B atoms. These results prove that BGaN is useful as a neutron-detecting semiconductor material

The content you want is available to Zendy users.

Already have an account? Click here to sign in.

Having issues? You can contact us here

Accelerating Research