Development of substrate-removal-free vertical ultraviolet light-emitting diode (RefV-LED) | Zendy

Noriko Kurose | Zendy; K. Shibano | Zendy; T. Araki | Zendy; Y. Aoyagi | Zendy

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Development of substrate-removal-free vertical ultraviolet light-emitting diode (RefV-LED)

Author(s) -

Noriko Kurose,

K. Shibano,

T. Araki,

Y. Aoyagi

Publication year - 2014

Publication title -

aip advances

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.421

H-Index - 58

ISSN - 2158-3226

DOI - 10.1063/1.4867090

Subject(s) - materials science , optoelectronics , substrate (aquarium) , light emitting diode , metalorganic vapour phase epitaxy , ultraviolet , electrode , epitaxy , diode , quantum well , layer (electronics) , light emission , optics , nanotechnology , chemistry , laser , oceanography , physics , geology

A vertical ultraviolet (UV) light-emitting diode (LED) that does not require substrate removal is developed. Spontaneous via holes are formed in n-AlN layer epitaxially grown on a high conductive n+Si substrate and the injected current flows directly from the p-electrode to high doped n+ Si substrate through p-AlGaN, multi-quantum wells, n-AlGaN and spontaneous via holes in n-AlN. The spontaneous via holes were formed by controlling feeding-sequence of metal-organic gas sources and NH3 and growth temperature in MOCVD. The via holes make insulating n-AlN to be conductive. We measured the current-voltage, current-light intensity and emission characteristics of this device. It exhibited a built-in voltage of 3.8 V and emission was stated at 350 nm from quantum wells with successive emission centered at 400 nm. This UV LED can be produced, including formation of n and p electrodes, without any resist process

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