Open AccessOptimization of oxidation processes to improve crystalline silicon solar cell emitters
Author(s) -
Lei Shen,
Zongcun Liang,
C. F. Liu,
Long Tao,
D. L. Wang
Publication year - 2014
Publication title -
aip advances
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.421
H-Index - 58
ISSN - 2158-3226
DOI - 10.1063/1.4866981
Subject(s) - sheet resistance , solar cell , materials science , silicon , equivalent series resistance , crystalline silicon , common emitter , short circuit , optoelectronics , diffusion , open circuit voltage , deposition (geology) , chemical engineering , nanotechnology , voltage , electrical engineering , layer (electronics) , physics , engineering , paleontology , sediment , biology , thermodynamics
Control of the oxidation process is one key issue in producing high-quality emitters for crystalline silicon solar cells. In this paper, the oxidation parameters of pre-oxidation time, oxygen concentration during pre-oxidation and pre-deposition and drive-in time were optimized by using orthogonal experiments. By analyzing experimental measurements of short-circuit current, open circuit voltage, series resistance and solar cell efficiency in solar cells with different sheet resistances which were produced by using different diffusion processes, we inferred that an emitter with a sheet resistance of approximately 70 Ω/□ performed best under the existing standard solar cell process. Further investigations were conducted on emitters with sheet resistances of approximately 70 Ω/□ that were obtained from different preparation processes. The results indicate that emitters with surface phosphorus concentrations between 4.96 × 1020 cm−3 and 7.78 × 1020 cm−3 and with junction depths between 0.46 μm and 0.55 μm possessed the best quality. With no extra processing, the final preparation of the crystalline silicon solar cell efficiency can reach 18.41%, which is an increase of 0.4%abs compared to conventional emitters with 50 Ω/□ sheet resistance