Open AccessDependence of reactive metal layer on resistive switching in a bi-layer structure Ta/HfOx filament type resistive random access memory
Author(s) -
Daeseok Lee,
Jiyong Woo,
Sangsu Park,
Euijun Cha,
Sangheon Lee,
Hyunsang Hwang
Publication year - 2014
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.4866671
Subject(s) - resistive random access memory , materials science , layer (electronics) , protein filament , resistive touchscreen , optoelectronics , metal , nanotechnology , composite material , electrode , chemistry , electrical engineering , metallurgy , engineering
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