Boron- and phosphorus-doped silicon germanium alloy nanocrystals—Nonthermal plasma synthesis and gas-phase thin film deposition | Zendy

David J. Rowe | Zendy; Uwe Kortshagen | Zendy

Open Access

Boron- and phosphorus-doped silicon germanium alloy nanocrystals—Nonthermal plasma synthesis and gas-phase thin film deposition

Author(s) -

David J. Rowe,

Uwe Kortshagen

Publication year - 2014

Publication title -

apl materials

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.571

H-Index - 60

ISSN - 2166-532X

DOI - 10.1063/1.4865158

Subject(s) - materials science , germanium , dopant , silicon , doping , thermoelectric effect , alloy , thin film , boron , chemical engineering , silicon germanium , deposition (geology) , nanocrystal , nanotechnology , optoelectronics , metallurgy , organic chemistry , chemistry , physics , engineering , thermodynamics , paleontology , sediment , biology

Alloyed silicon-germanium (SiGe) nanostructures are the topic of renewed research due to applications in modern optoelectronics and high-temperature thermoelectric materials. However, common techniques for producing nanostructured SiGe focus on bulk processing; therefore little is known of the physical properties of SiGe nanocrystals (NCs) synthesized from molecular precursors. In this letter, we synthesize and deposit thin films of doped SiGe NCs using a single, flow-through nonthermal plasma reactor and inertial impaction. Using x-ray and vibrational analysis, we show that the SiGe NC structure appears truly alloyed for Si1−xGex for 0.16 < x < 0.24, and quantify the atomic dopant incorporation within the SiGe NC films

The content you want is available to Zendy users.

Already have an account? Click here to sign in.

Having issues? You can contact us here

Accelerating Research