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Solution processed nickel oxide anodes for organic photovoltaic devices
Author(s) -
Bestoon T. Mustafa,
Jon Griffin,
Abdullah Alsulami,
David G. Lidzey,
Alastair Buckley
Publication year - 2014
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.4865090
Subject(s) - non blocking i/o , nickel oxide , nickel , materials science , annealing (glass) , x ray photoelectron spectroscopy , thin film , work function , heterojunction , organic solar cell , chemical engineering , oxide , inorganic chemistry , catalysis , layer (electronics) , optoelectronics , metallurgy , nanotechnology , chemistry , organic chemistry , composite material , polymer , engineering
Nickel oxide thin films have been prepared from a nickel acetylacetonate (Ni(acac)) precursor for use in bulk heterojunction organic photovoltaic devices. The conversion of Ni(acac) to NiOx has been investigated. Oxygen plasma treatment of the NiO layer after annealing at 400 °C affords solar cell efficiencies of 5.2%. Photoelectron spectroscopy shows that high temperature annealing converts the Ni(acac) to a reduced form of nickel oxide. Additional oxygen plasma treatment further oxidizes the surface layers and deepens the NiO work function from 4.7 eV for the annealed film, to 5.0 eV allowing for efficient hole extraction at the organic interface.

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