Epitaxial growth of γ-Al2O3 on Ti2AlC(0001) by reactive high-power impulse magnetron sputtering | Zendy

Per Eklund | Zendy; Jenny Frodelius | Zendy; Lars Hultman | Zendy; Jun Lu | Zendy; D. Magnfält | Zendy

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Epitaxial growth of γ-Al2O3 on Ti2AlC(0001) by reactive high-power impulse magnetron sputtering

Author(s) -

Per Eklund,

Jenny Frodelius,

Lars Hultman,

Jun Lu,

D. Magnfält

Publication year - 2014

Publication title -

aip advances

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.421

H-Index - 58

ISSN - 2158-3226

DOI - 10.1063/1.4863560

Subject(s) - epitaxy , materials science , sputter deposition , annealing (glass) , transmission electron microscopy , high power impulse magnetron sputtering , sputtering , crystallography , thin film , electron diffraction , cavity magnetron , analytical chemistry (journal) , diffraction , layer (electronics) , metallurgy , nanotechnology , chemistry , optics , physics , chromatography

Al2O3 was deposited by reactive high-power impulse magnetron sputtering at 600 °C onto pre-deposited Ti2AlC(0001) thin films on α-Al2O3(0001) substrates. The Al2O3 was deposited to a thickness of 65 nm and formed an adherent layer of epitaxial γ-Al2O3(111) as shown by transmission electron microscopy. The demonstration of epitaxial growth of γ-Al2O3 on Ti2AlC(0001) open prospects for growth of crystalline alumina as protective coatings on Ti2AlC and related nanolaminated materials. The crystallographic orientation relationships are γ-Al2O3(111)//Ti2AlC(0001) (out-of-plane) and γ- Al 2O3(22¯0)// Ti 2 AlC (112¯0) (in-plane) as determined by electron diffraction. Annealing in vacuum at 900 °C resulted in partial decomposition of the Ti2AlC by depletion of Al and diffusion into and through the γ-Al2O3 layer

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