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Dislocation engineering in SiGe on periodic and aperiodic Si(001) templates studied by fast scanning X-ray nanodiffraction
Author(s) -
V. Mondiali,
Monica Bollani,
Stefano Cecchi,
MarieIngrid Richard,
Tobias U. Schülli,
Gilbert Chahine,
Daniel Chrastina
Publication year - 2014
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.4862688
Subject(s) - materials science , diffraction , dislocation , substrate (aquarium) , aperiodic graph , x ray crystallography , crystallography , intensity (physics) , optics , bunches , x ray , scanning electron microscope , relaxation (psychology) , microscopy , optoelectronics , composite material , physics , chemistry , beam (structure) , mathematics , combinatorics , psychology , social psychology , oceanography , geology
Fast-scanning X-ray nanodiffraction microscopy is used to directly visualize the misfit dislocation network in a SiGe film deposited on a pit-patterned Si substrate at the beginning of plastic relaxation. X-ray real-space diffracted intensity maps are compared to topographic atomic force microscopy images, in which crosshatch lines can be seen. The change in intensity distribution as a function of the incidence angle shows localized variations in strain within the SiGe film. These variations, which reflect the order imposed by the substrate pattern, are attributed to the presence of both bunches of misfit dislocations and defect-free regions

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