Spin transport in benzofurane bithiophene based organic spin valves | Zendy

M. Palosse | Zendy; Isabelle Séguy | Zendy; E. BedelPereira | Zendy; Christina Villeneuve-Faure | Zendy; Charlotte Mallet | Zendy; Pierre Frère | Zendy; B. Warot-Fonrose | Zendy; N. Bizière | Zendy; Jean-François Bobo | Zendy

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Spin transport in benzofurane bithiophene based organic spin valves

Author(s) -

M. Palosse,

Isabelle Séguy,

E. BedelPereira,

Christina Villeneuve-Faure,

Charlotte Mallet,

Pierre Frère,

B. Warot-Fonrose,

N. Bizière,

Jean-François Bobo

Publication year - 2014

Publication title -

aip advances

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.421

H-Index - 58

ISSN - 2158-3226

DOI - 10.1063/1.4862675

Subject(s) - materials science , spin valve , magnetoresistance , ferromagnetism , layer (electronics) , spin (aerodynamics) , stacking , condensed matter physics , hysteresis , magnetic hysteresis , electrode , nanotechnology , magnetization , chemistry , magnetic field , organic chemistry , physics , quantum mechanics , aerospace engineering , engineering

In this paper we present spin transport in organic spin-valves using benzofurane bithiophene (BF3) as spacer layer between NiFe and Co ferromagnetic electrodes. The use of an AlO x buffer layer between the top electrode and the organic layer is discussed in terms of improvements of stacking topology, electrical transport and oxygen contamination of the BF3 layer. A study of magnetic hysteresis cycles evidences spin-valve behaviour. Transport properties are indicative of unshorted devices with non-linear I-V characteristics. Finally we report a magnetoresistance of 3% at 40 K and 10 mV in a sample with a 50 nm thick spacer layer, using an AlO x buffer layer.

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