Open AccessHeteroepitaxy of InP on Si(001) by selective-area metal organic vapor-phase epitaxy in sub-50 nm width trenches: The role of the nucleation layer and the recess engineering
Author(s) -
Clément Merckling,
Niamh Waldron,
Shidong Jiang,
Weiming Guo,
N. Collaert,
M. Caymax,
E. Vancoille,
K. Barla,
Aaron Thean,
M. Heyns,
Wilfried Vandervorst
Publication year - 2014
Publication title -
journal of applied physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.699
H-Index - 319
eISSN - 1089-7550
pISSN - 0021-8979
DOI - 10.1063/1.4862044
Subject(s) - nucleation , materials science , trench , epitaxy , silicon , layer (electronics) , shallow trench isolation , optoelectronics , semiconductor , chemical vapor deposition , metalorganic vapour phase epitaxy , phase (matter) , nanotechnology , chemistry , organic chemistry
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