Low-temperature (180 °C) formation of large-grained Ge (111) thin film on insulator using accelerated metal-induced crystallization | Zendy

Kaoru Toko | Zendy; Ryohei Numata | Zendy; Oya N | Zendy; Naoki Fukata | Zendy; Noritaka Usami | Zendy; Takashi Suemasu | Zendy

Open Access

Low-temperature (180 °C) formation of large-grained Ge (111) thin film on insulator using accelerated metal-induced crystallization

Author(s) -

Kaoru Toko,

Ryohei Numata,

Oya N,

Naoki Fukata,

Noritaka Usami,

Takashi Suemasu

Publication year - 2014

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.4861890

Subject(s) - materials science , crystallization , crystallite , germanium , amorphous solid , electron backscatter diffraction , thin film , doping , insulator (electricity) , diffraction , layer (electronics) , crystallography , analytical chemistry (journal) , optoelectronics , composite material , microstructure , nanotechnology , optics , chemical engineering , metallurgy , silicon , chemistry , physics , chromatography , engineering

The Al-induced crystallization (AIC) yields a large-grained (111)-oriented Ge thin film on an insulator at temperatures as low as 180 °C. We accelerated the AIC of an amorphous Ge layer (50-nm thickness) by initially doping Ge in Al and by facilitating Ge diffusion into Al. The electron backscatter diffraction measurement demonstrated the simultaneous achievement of large grains over 10 μm and a high (111) orientation fraction of 90% in the polycrystalline Ge layer formed at 180 °C. This result opens up the possibility for developing Ge-based electronic and optical devices fabricated on inexpensive flexible substrates

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