Highly rectifying p-ZnCo2O4/n-ZnO heterojunction diodes | Zendy

FriedrichLeonhard Schein | Zendy; Markus Winter | Zendy; Tammo Böntgen | Zendy; Holger von Wenckstern | Zendy; Marius Grundmann | Zendy

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Highly rectifying p-ZnCo₂O₄/n-ZnO heterojunction diodes

Author(s) -

FriedrichLeonhard Schein,

Markus Winter,

Tammo Böntgen,

Holger von Wenckstern,

Marius Grundmann

Publication year - 2014

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.4861648

Subject(s) - heterojunction , materials science , pulsed laser deposition , diode , optoelectronics , rectification , amorphous solid , thin film , analytical chemistry (journal) , epitaxy , nanotechnology , chemistry , crystallography , chromatography , layer (electronics) , power (physics) , physics , quantum mechanics

We present oxide bipolar heterojunction diodes consisting of p-type ZnCo2O4 and n-type ZnO fabricated by pulsed-laser deposition. Hole conduction of ZnCo2O4 (ZCO) was evaluated by Hall and Seebeck effect as well as scanning capacitance spectroscopy. Both, ZCO/ZnO and ZnO/ZCO type heterostructures, showed diode characteristics. For amorphous ZCO deposited at room temperature on epitaxial ZnO/Al2O3 thin films, we achieved current rectification ratios up to 2 × 1010, ideality factors around 2, and long-term stability.

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