Elucidation on Joule heating and its consequences on the performance of organic light emitting diodes | Zendy

Priyanka Tyagi | Zendy; Lalat Indu Giri | Zendy; Suneet Tuli | Zendy; Ritu Srivastava | Zendy

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Elucidation on Joule heating and its consequences on the performance of organic light emitting diodes

Author(s) -

Priyanka Tyagi,

Lalat Indu Giri,

Suneet Tuli,

Ritu Srivastava

Publication year - 2014

Publication title -

journal of applied physics

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.699

H-Index - 319

eISSN - 1089-7550

pISSN - 0021-8979

DOI - 10.1063/1.4861412

Subject(s) - joule heating , oled , materials science , optoelectronics , diode , heat generation , current density , temperature measurement , voltage , thermal conduction , infrared , electrode , response time , thermography , light emitting diode , chemistry , optics , thermodynamics , composite material , electrical engineering , physics , computer graphics (images) , layer (electronics) , quantum mechanics , computer science , engineering

Current work presents a quantitative analysis of Joule heating by temperature measurements using infrared thermography and heat estimation of organic light emitting diodes (OLEDs) and their correlation with device life time. These temperature measurements were performed at 10, 20, 30, 40, and 50 mA/cm2 current densities and studied with operational time. The temperature rise of the device has increased from 9.8 to 16.6 °C within 168 h at an operating current density of 40 mA/cm2. This has been ascribed as due to the external contamination by water, oxygen, and dust particles as well as by internal heat generation. Encapsulation of the device avoids external degradation of OLEDs by preventing the destruction caused by these external contaminations. In this way, encapsulation has led to the decreased temperature rise of 12.4 °C within the duration of 168 h, which reflects the improved stability of the device. The temperature measured has been used to calculate the heat generated inside the device by solving...

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