Open AccessDegradation characteristics of metal/Al2O3/n-InGaAs capacitors
Author(s) -
Félix Palumbo,
M. Eizenberg
Publication year - 2014
Publication title -
journal of applied physics
Language(s) - Uncategorized
Resource type - Journals
SCImago Journal Rank - 0.699
H-Index - 319
eISSN - 1089-7550
pISSN - 0021-8979
DOI - 10.1063/1.4861033
Subject(s) - materials science , degradation (telecommunications) , dielectric , capacitor , oxide , stress (linguistics) , optoelectronics , semiconductor , deposition (geology) , high κ dielectric , layer (electronics) , metal , metal gate , gate oxide , electronic engineering , voltage , composite material , electrical engineering , metallurgy , transistor , paleontology , linguistics , philosophy , sediment , engineering , biology
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