Resistive switching properties of Ce and Mn co-doped BiFeO3 thin films for nonvolatile memory application | Zendy

Zhenhua Tang | Zendy; Jia Zeng | Zendy; Ying Xiong | Zendy; Minghua Tang | Zendy; Dinglin Xu | Zendy; C. P. Cheng | Zendy; Yongguang Xiao | Zendy; Yichun Zhou | Zendy

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Resistive switching properties of Ce and Mn co-doped BiFeO₃ thin films for nonvolatile memory application

Author(s) -

Zhenhua Tang,

Jia Zeng,

Ying Xiong,

Minghua Tang,

Dinglin Xu,

C. P. Cheng,

Yongguang Xiao,

Yichun Zhou

Publication year - 2013

Publication title -

aip advances

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.421

H-Index - 58

ISSN - 2158-3226

DOI - 10.1063/1.4860950

Subject(s) - materials science , thin film , doping , schottky diode , non volatile memory , optoelectronics , thermal conduction , space charge , resistive touchscreen , analytical chemistry (journal) , nanotechnology , electrical engineering , chemistry , electron , composite material , physics , engineering , chromatography , diode , quantum mechanics

The Ce and Mn co-doped BiFeO3 (BCFMO) thin films were synthesized on Pt/Ti/SiO2/Si substrates using a sol-gel method. The unipolar resistive switching (URS) and bipolar resistive switching (BRS) behaviors were observed in the Pt/BCFMO/Pt device structure, which was attributed to the formation/rupture of metal filaments. The fabricated device exhibits a large ROFF/RON ratio (>80), long retention time (>105 s) and low programming voltages (<1.5 V). Analysis of linear fitting current-voltage curves suggests that the space charge limited leakage current (SCLC) and Schottky emission were observed as the conduction mechanisms of the devices

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