Open AccessErratum: “Dependence of the Mg-related acceptor ionization energy with the acceptor concentration in p-type GaN layers grown by molecular beam epitaxy” [Appl. Phys. Lett. 103, 032102 (2013)]
Author(s) -
Stéphane Brochen,
J. Brault,
Sébastien Chenot,
A. Dussaigne,
Mathieu Leroux,
B. Damilano
Publication year - 2013
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.4858978
Subject(s) - molecular beam epitaxy , acceptor , epitaxy , materials science , ionization , ionization energy , wide bandgap semiconductor , optoelectronics , molecular physics , chemical physics , condensed matter physics , chemistry , nanotechnology , physics , layer (electronics) , ion , organic chemistry
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