Open AccessPrecise lattice location of substitutional and interstitial Mg in AlN
Author(s) -
L. M. Amorim,
U. Wahl,
L. M. C. Pereira,
S. Decoster,
D. J. Silva,
M. R. da Silva,
A. Gottberg,
J. G. Correia,
K. Temst,
A. Vantomme
Publication year - 2013
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.4858389
Subject(s) - interstitial defect , lattice (music) , nitride , materials science , doping , octahedron , condensed matter physics , crystallography , semiconductor , context (archaeology) , crystal structure , atomic physics , chemistry , physics , nanotechnology , optoelectronics , geology , paleontology , layer (electronics) , acoustics
The lattice site location of radioactive $^{27}$Mg implanted in AlN was determined by means of emission channeling. The majority of the $^{27}$Mg was found to substitute for Al, yet significant fractions (up to 33%) were also identified close to the octahedral interstitial site. The activation energy for interstitial Mg diffusion is estimated to be between 1.1 eV and 1.7 eV. Substitutional Mg is shown to occupy ideal Al sites within a 0.1 Å experimental uncertainty. We discuss the absence of significant displacements from ideal Al sites in the context of the current debate on Mg doped nitride semiconductors
Accelerating Research
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom
Address
John Eccles HouseRobert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom