z-logo
open-access-imgOpen Access
Field-dependent critical state of high-Tc superconducting strip simultaneously exposed to transport current and perpendicular magnetic field
Author(s) -
Cun Xue,
Aihua He,
Huadong Yong,
Youhe Zhou
Publication year - 2013
Publication title -
aip advances
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.421
H-Index - 58
ISSN - 2158-3226
DOI - 10.1063/1.4849396
Subject(s) - superconductivity , condensed matter physics , current (fluid) , magnetic field , physics , current density , penetration depth , flux pinning , perpendicular , field (mathematics) , type ii superconductor , critical field , flux (metallurgy) , magnetic flux , critical current , materials science , geometry , mathematics , quantum mechanics , thermodynamics , pure mathematics , metallurgy
We present an exact analytical approach for arbitrary field-dependent critical state of high-Tc superconducting strip with transport current. The sheet current and flux-density profiles are derived by solving the integral equations, which agree with experiments quite well. For small transport current, the approximate explicit expressions of sheet current, flux-density and penetration depth for the Kim model are derived based on the mean value theorem for integration. We also extend the results to the field-dependent critical state of superconducting strip in the simultaneous presence of applied field and transport current. The sheet current distributions calculated by the Kim model agree with experiments better than that by the Bean model. Moreover, the lines in the Ia-Ba plane for the Kim model are not monotonic, which is quite different from that the Bean model. The results reveal that the maximum transport current in thin superconducting strip will decrease with increasing applied field which vanishes for the Bean model. The results of this paper are useful to calculate ac susceptibility and ac loss

The content you want is available to Zendy users.

Already have an account? Click here to sign in.
Having issues? You can contact us here