Auger recombination suppression and band alignment in GaAsBi/GaAs heterostructures
Author(s) -
K. Hild,
Zahida Batool,
S. R. Jin,
N. Hossain,
Igor P. Marko,
T. JC. Hosea,
X. Lu,
T. Tiedje,
Stephen J. Sweeney
Publication year - 2013
Publication title -
aip conference proceedings
Language(s) - English
Resource type - Conference proceedings
SCImago Journal Rank - 0.177
H-Index - 75
eISSN - 1551-7616
pISSN - 0094-243X
DOI - 10.1063/1.4848498
Subject(s) - icon , computer science , citation , download , heterojunction , online search , information retrieval , physics , world wide web , optoelectronics , programming language
Using a combination of experimental and theoretical techniques we present the dependence of the bandgap\udEg and the spin orbit splitting energy so, with Bi concentration in GaAsBi/GaAs samples. We find that the\udconcentration at which so,> Eg occurs at 9%. Both spectroscopic as well as first device results indicate a type I alignment
Accelerating Research
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom
Address
John Eccles HouseRobert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom