Upward ferroelectric self-poling in (001) oriented PbZr0.2Ti0.8O3 epitaxial films with compressive strain | Zendy

Ying Luo | Zendy; Xueyan Li | Zendy; Lei Chang | Zendy; Wenxiu Gao | Zendy; Guoliang Yuan | Zendy; Jiang Yin | Zendy; Zhiguo Liu | Zendy

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Upward ferroelectric self-poling in (001) oriented PbZr0.2Ti0.8O3 epitaxial films with compressive strain

Author(s) -

Ying Luo,

Xueyan Li,

Lei Chang,

Wenxiu Gao,

Guoliang Yuan,

Jiang Yin,

Zhiguo Liu

Publication year - 2013

Publication title -

aip advances

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.421

H-Index - 58

ISSN - 2158-3226

DOI - 10.1063/1.4840595

Subject(s) - epitaxy , poling , materials science , crystallite , ferroelectricity , substrate (aquarium) , layer (electronics) , thin film , condensed matter physics , optoelectronics , crystallography , nanotechnology , chemistry , metallurgy , physics , oceanography , geology , dielectric

Upward self-poling phenomenon was observed in PbZr0.2Ti0.8O3 ferroelectric films which were grown on (001) SrTiO3 substrate with either p-type La0.7Sr0.3MnO3 or n-type SrRuO3 buffered layer, or on n-type (001) Nb-SrTiO3 substrate. Both upward self-poling and epitaxial strain are strong in the super-thin PbZr0.2Ti0.8O3 epitaxial films, while they become weak and finally disappear in thick epitaxial films or thin epitaxial films with high-density oxygen vacancies. Besides, both of them disappear in PbZr0.2Ti0.8O3 polycrystalline films on Pt/TiO2/SiO2/Si substrate. Therefore, the main origin of upward self-poling is epitaxial strain rather than p-n/Schottky junction or charged vacancies in PbZr0.2Ti0.8O3 epitaxial films here

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