In situ growth of p and n-type graphene thin films and diodes by pulsed laser deposition | Zendy

S. R. Sarath Kumar | Zendy; Pradipta K. Nayak | Zendy; Mohamed Nejib Hedhili | Zendy; Mohd Adnan Khan | Zendy; Husam N. Alshareef | Zendy

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In situ growth of p and n-type graphene thin films and diodes by pulsed laser deposition

Author(s) -

S. R. Sarath Kumar,

Pradipta K. Nayak,

Mohamed Nejib Hedhili,

Mohd Adnan Khan,

Husam N. Alshareef

Publication year - 2013

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.4829356

Subject(s) - graphene , materials science , raman spectroscopy , thin film , pulsed laser deposition , x ray photoelectron spectroscopy , analytical chemistry (journal) , seebeck coefficient , optoelectronics , nanotechnology , chemistry , thermal conductivity , optics , chemical engineering , composite material , physics , engineering , chromatography

We report the in situ growth of p and n-type graphene thin films by ultraviolet pulsed laser deposition in the presence of argon and nitrogen, respectively. Electron microscopy and Raman studies confirmed the growth, while temperature dependent electrical conductivity and Seebeck coefficient studies confirmed the polarity type of graphene films. Nitrogen doping at different sites of the honeycomb structure, responsible for n-type conduction, is identified using X-ray photoelectron spectroscopy, for films grown in nitrogen. A diode-like rectifying behavior is exhibited by p-n junction diodes fabricated using the graphene films

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