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Photothermoelectric response in asymmetric carbon nanotube devices exposed to sub-terahertz radiation
Author(s) -
Georgy Fedorov,
А. И. Кардакова,
Igor Gayduchenko,
I. Charayev,
B. M. Voronov,
Matvey Finkel,
T. M. Klapwijk,
S. A. Morozov,
M. Yu. Presniakov,
Ivan Bobrinetskiy,
Руслан Ибрагимов,
G. Gol'tsman
Publication year - 2013
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.4828555
Subject(s) - responsivity , carbon nanotube , terahertz radiation , materials science , optoelectronics , van der waals force , microwave , voltage , substrate (aquarium) , radiation , nanotechnology , optics , photodetector , chemistry , electrical engineering , physics , oceanography , organic chemistry , engineering , quantum mechanics , molecule , geology
We report on the voltage response of carbon nanotube devices to sub-terahertz (THz) radiation. The devices contain carbon nanotubes (CNTs), which are over their length partially suspended and partially Van der Waals bonded to a SiO2 substrate, causing a difference in thermal contact. We observe a DC voltage upon exposure to 140?GHz radiation. Based on the observed gate voltage and power dependence, at different temperatures, we argue that the observed signal is both thermal and photovoltaic. The room temperature responsivity in the microwave to THz range exceeds that of CNT based devices reported before

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