Effects of electrode material and configuration on the characteristics of planar resistive switching devices | Zendy

HaiFeng Peng | Zendy; Lyong Sun Pu | Zendy; Jialu Wu | Zendy; Dongkyu Cha | Zendy; Junghyup Hong | Zendy; Weinan Lin | Zendy; Yangyang Li | Zendy; Junfeng Ding | Zendy; Adrian David | Zendy; K. Li | Zendy; Tom Wu | Zendy

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Effects of electrode material and configuration on the characteristics of planar resistive switching devices

Author(s) -

HaiFeng Peng,

Lyong Sun Pu,

Jialu Wu,

Dongkyu Cha,

Junghyup Hong,

Weinan Lin,

Yangyang Li,

Junfeng Ding,

Adrian David,

K. Li,

Tom Wu

Publication year - 2013

Publication title -

apl materials

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.571

H-Index - 60

ISSN - 2166-532X

DOI - 10.1063/1.4827597

Subject(s) - materials science , electrode , ohmic contact , electric field , work function , schottky diode , optoelectronics , oxide , resistive touchscreen , schottky barrier , planar , nanotechnology , electrical engineering , layer (electronics) , computer science , chemistry , physics , computer graphics (images) , engineering , quantum mechanics , diode , metallurgy

We report that electrode engineering, particularly tailoring the metal work function, measurement configuration and geometric shape, has significant effects on the bipolar resistive switching (RS) in lateral memory devices based on self-doped SrTiO3 (STO) single crystals. Metals with different work functions (Ti and Pt) and their combinations are used to control the junction transport (either ohmic or Schottky-like). We find that the electric bias is effective in manipulating the concentration of oxygen vacancies at the metal/STO interface, influencing the RS characteristics. Furthermore, we show that the geometric shapes of electrodes (e.g., rectangular, circular, or triangular) affect the electric field distribution at the metal/oxide interface, thus plays an important role in RS. These systematic results suggest that electrode engineering should be deemed as a powerful approach toward controlling and improving the characteristics of RS memories. 2013 Author(s)

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