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FePt thin films with a thickness of 30 nm were deposited by dc magnetron sputtering at room temperature onto SiO2(100 nm)/Si(100) substrates. These films were post-annealed in a temperature range of 500 °C to 900 °C for 30 s in three different atmospheres—N2, Ar, and forming gas (Ar+H2 (3 vol. %)). Irrespective of the annealing atmosphere, the chemically ordered L10 FePt phase has formed after annealing at 500 °C. Higher annealing temperatures in N2 or Ar atmosphere resulted in a strong increase in grain size and surface roughness but also in the appearance of a pronounced (001) texture in the FePt films. However, these films show the presence of iron oxide. In contrast, annealing in forming gas atmosphere suppressed the oxidation process and resulted in a reduced grain size and lower surface roughness. However, no (001)—but a strong (111)—texture was obtained after annealing at 700 °C, which might be related to the reduced unit cell tetragonality and incorporation of hydrogen to the FePt lattice. Thus, t...

Influence of the annealing atmosphere on the structural properties of FePt thin films