Open AccessEffect of residual stress on energy storage property in PbZrO3 antiferroelectric thin films with different orientations
Author(s) -
Jun Ge,
Denis Rémiens,
J. Costecalde,
Ying Chen,
Xianlin Dong,
Genshui Wang
Publication year - 2013
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.4825336
Subject(s) - antiferroelectricity , materials science , residual stress , thin film , ferroelectricity , composite material , stress (linguistics) , ultimate tensile strength , dielectric , nanotechnology , optoelectronics , linguistics , philosophy
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