Open AccessIn situ study of the role of substrate temperature during atomic layer deposition of HfO2 on InP
Author(s) -
Hong Dong,
K. C. Santosh,
Xiaoye Qin,
Barry Brennan,
Stephen McDonnell,
D. M. Zhernokletov,
Christopher L. Hinkle,
J. Kim,
K. Cho,
Robert M. Wallace
Publication year - 2013
Publication title -
journal of applied physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.699
H-Index - 319
eISSN - 1089-7550
pISSN - 0021-8979
DOI - 10.1063/1.4825218
Subject(s) - atomic layer deposition , x ray photoelectron spectroscopy , substrate (aquarium) , passivation , oxide , deposition (geology) , layer (electronics) , in situ , materials science , analytical chemistry (journal) , chemical engineering , chemical vapor deposition , chemistry , inorganic chemistry , nanotechnology , metallurgy , environmental chemistry , paleontology , oceanography , sediment , geology , engineering , biology , organic chemistry
The dependence of the “self cleaning” effect of the substrate oxides on substrate temperature during atomic layer deposition (ALD) of HfO2 on various chemically treated and native oxide InP (100) substrates is investigated using in situ X-ray photoelectron spectroscopy. The removal of In-oxide is found to be more efficient at higher ALD temperatures. The P oxidation states on native oxide and acid etched samples are seen to change, with the total P-oxide concentration remaining constant, after 10 cycles of ALD HfO2 at different temperatures. An (NH4)2 S treatment is seen to effectively remove native oxides and passivate the InP surfaces independent of substrate temperature studied (200 °C, 250 °C and 300 °C) before and after the ALD process. Density functional theory modeling provides insight into the mechanism of the changes in the P-oxide chemical states.
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