Open AccessHigh quality relaxed germanium layers grown on (110) and (111) silicon substrates with reduced stacking fault formation
Author(s) -
VanHuy Nguyen,
A. Dobbie,
M. Myronov,
D. R. Leadley
Publication year - 2013
Publication title -
journal of applied physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.699
H-Index - 319
eISSN - 1089-7550
pISSN - 0021-8979
DOI - 10.1063/1.4825130
Subject(s) - materials science , epitaxy , silicon , germanium , stacking , stacking fault , layer (electronics) , surface roughness , dislocation , chemical vapor deposition , surface finish , optoelectronics , crystallography , composite material , chemistry , organic chemistry
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