Adsorption-controlled growth of BiVO4 by molecular-beam epitaxy | Zendy

Stephanie Stoughton | Zendy; M. Showak | Zendy; QinSheng Mao | Zendy; Prakash Koirala | Zendy; Daniel Hillsberry | Zendy; Shawn Sallis | Zendy; Lena F. Kourkoutis | Zendy; Khai V. Nguyen | Zendy; Louis F. J. Piper | Zendy; D. A. Ténné | Zendy; Nikolas J. Podraza | Zendy; David A. Muller | Zendy; Carolina Adamo | Zendy; Darrell G. Schlom | Zendy

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Adsorption-controlled growth of BiVO4 by molecular-beam epitaxy

Author(s) -

Stephanie Stoughton,

M. Showak,

QinSheng Mao,

Prakash Koirala,

Daniel Hillsberry,

Shawn Sallis,

Lena F. Kourkoutis,

Khai V. Nguyen,

Louis F. J. Piper,

D. A. Ténné,

Nikolas J. Podraza,

David A. Muller,

Carolina Adamo,

Darrell G. Schlom

Publication year - 2013

Publication title -

apl materials

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.571

H-Index - 60

ISSN - 2166-532X

DOI - 10.1063/1.4824041

Subject(s) - materials science , monoclinic crystal system , molecular beam epitaxy , epitaxy , raman spectroscopy , yttria stabilized zirconia , cubic zirconia , electron diffraction , spectroscopy , scanning transmission electron microscopy , transmission electron microscopy , analytical chemistry (journal) , electron energy loss spectroscopy , crystallography , diffraction , nanotechnology , optics , crystal structure , chemistry , organic chemistry , metallurgy , ceramic , physics , quantum mechanics , layer (electronics)

Single-phase epitaxial films of the monoclinic polymorph of BiVO4 were synthesized by reactive molecular-beam epitaxy under adsorption-controlled conditions. The BiVO4 films were grown on (001) yttria-stabilized cubic zirconia (YSZ) substrates. Four-circle x-ray diffraction, scanning transmission electron microscopy (STEM), and Raman spectroscopy confirm the epitaxial growth of monoclinic BiVO4 with an atomically abrupt interface and orientation relationship (001)BiVO4 ∥ (001)YSZ with [100]BiVO4 ∥ [100]YSZ. Spectroscopic ellipsometry, STEM electron energy loss spectroscopy (STEM-EELS), and x-ray absorption spectroscopy indicate that the films have a direct band gap of 2.5 ± 0.1 eV

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