Effect of grain-boundaries on electrical properties of n-ZnO:Al/p-Si heterojunction diodes | Zendy

Mohit Kumar | Zendy; A. Kanjilal | Zendy; T. Som | Zendy

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Effect of grain-boundaries on electrical properties of n-ZnO:Al/p-Si heterojunction diodes

Author(s) -

Mohit Kumar,

A. Kanjilal,

T. Som

Publication year - 2013

Publication title -

aip advances

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.421

H-Index - 58

ISSN - 2158-3226

DOI - 10.1063/1.4823480

Subject(s) - grain boundary , materials science , heterojunction , diode , electrical resistivity and conductivity , capacitance , grain size , optoelectronics , current density , rectangular potential barrier , composite material , electrode , chemistry , electrical engineering , microstructure , physics , quantum mechanics , engineering

We report on room temperature diode characteristics of ZnO:Al (AZO)/Si heterostructures by current-voltage measurements. In this study, with increasing AZO film thickness, systematic reduction in the turn-on potential (from 3.16 to 1.80 V) and the film stress are observed. Complementary capacitance-voltage studies reveal a decreasing trend in barrier height at the junction with increasing AZO film thickness. A gradual decrease in resistivity takes place with increasing AZO film thickness. Above observations are explained in the framework of AZO thickness dependent variation in grain size and in turn trap density at the grain boundaries influencing carrier transport across the adjacent grains

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