Open AccessWide-bandwidth charge sensitivity with a radio-frequency field-effect transistor
Author(s) -
Katsuhiko Nishiguchi,
Hiroshi Yamaguchi,
Akira Fujiwara,
Herre S. J. van der Zant,
Gary A. Steele
Publication year - 2013
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.4822430
Subject(s) - radio frequency , transistor , optoelectronics , materials science , bandwidth (computing) , field effect transistor , impedance matching , inductor , cutoff frequency , electrical engineering , capacitor , electrical impedance , rf power amplifier , voltage , cmos , engineering , telecommunications , amplifier
We demonstrate high-speed charge detection at room temperature with single-electron resolution by using a radio-frequency field-effect transistor (RF-FET). The RF-FET combines a nanometer-scale silicon FET with an impedance-matching circuit composed of an inductor and capacitor. Driving the RF-FET with a carrier signal at its resonance frequency, small signals at the transistor's gate modulate the impedance of the resonant circuit, which is monitored at high speed using the reflected signal. The RF-FET driven by high-power carrier signals enables a charge sensitivity of 2?×?10?4?e/Hz0.5 at a readout bandwidth of 20?MHz
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