Band offsets at zincblende-wurtzite GaAs nanowire sidewall surfaces | Zendy

Pierre Capiod | Zendy; Tengfei Xu | Zendy; J. P. Nys | Zendy; Maxime Berthe | Zendy; G. Patriarche | Zendy; L. Lymperakis | Zendy; Jörg Neugebauer | Zendy; Philippe Caroff | Zendy; Rafal E. DuninBorkowski | Zendy; Ph. Ebert | Zendy; B. Grandidier | Zendy

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Band offsets at zincblende-wurtzite GaAs nanowire sidewall surfaces

Author(s) -

Pierre Capiod,

Tengfei Xu,

J. P. Nys,

Maxime Berthe,

G. Patriarche,

L. Lymperakis,

Jörg Neugebauer,

Philippe Caroff,

Rafal E. DuninBorkowski,

Ph. Ebert,

B. Grandidier

Publication year - 2013

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.4821293

Subject(s) - wurtzite crystal structure , nanowire , condensed matter physics , density functional theory , materials science , fermi level , scanning tunneling spectroscopy , scanning tunneling microscope , band gap , electronic band structure , nanotechnology , chemistry , physics , computational chemistry , quantum mechanics , zinc , metallurgy , electron

The band structure and the Fermi level pinning at clean and well-ordered sidewall surfaces of zincblende (ZB)-wurtzite (WZ) GaAs nanowires are investigated by scanning tunneling spectroscopy and density functional theory calculations. The WZ-ZB phase transition in GaAs nanowires introduces p-i junctions at the sidewall surfaces. This is caused by the presence of numerous steps, which induce a Fermi level pinning at different energies on the non-polar WZ and ZB sidewall facets.

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