Reliable strain measurement in transistor arrays by robust scanning transmission electron microscopy | Zendy

Suhyun Kim | Zendy; Joong Jung Kim | Zendy; Younheum Jung | Zendy; Kyungwoo Lee | Zendy; Gwangsun Byun | Zendy; KyoungHwan Hwang | Zendy; Sunyoung Lee | Zendy; Kyupil Lee | Zendy

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Reliable strain measurement in transistor arrays by robust scanning transmission electron microscopy

Author(s) -

Suhyun Kim,

Joong Jung Kim,

Younheum Jung,

Kyungwoo Lee,

Gwangsun Byun,

KyoungHwan Hwang,

Sunyoung Lee,

Kyupil Lee

Publication year - 2013

Publication title -

aip advances

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.421

H-Index - 58

ISSN - 2158-3226

DOI - 10.1063/1.4821278

Subject(s) - materials science , transistor , strain (injury) , scanning transmission electron microscopy , field effect transistor , transmission electron microscopy , optoelectronics , dark field microscopy , strain engineering , microscopy , nanotechnology , optics , silicon , physics , medicine , voltage , quantum mechanics

Accurate measurement of the strain field in the channels of transistor arrays is critical for strain engineering in modern electronic devices. We applied atomic-resolution high-angle annular dark-field scanning transmission electron microscopy to quantitative measurement of the strain field in transistor arrays. The quantitative strain profile over 20 transistors was obtained with high reliability and a precision of 0.1%. The strain field was found to form homogeneously in the channels of the transistor arrays. Furthermore, strain relaxation due to the thin foil effect was quantitatively investigated for thicknesses of 35 to 275 nm

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