Integration of TaOx-based resistive-switching element and GaAs diode | Zendy

Zhenbang Xu | Zendy; Xin Tong | Zendy; S. F. Yoon | Zendy; YeeChia Yeo | Zendy; C. K. Chia | Zendy; Goutam Kumar Dalapati | Zendy; D. Z. | Zendy

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Integration of TaOx-based resistive-switching element and GaAs diode

Author(s) -

Zhenbang Xu,

Xin Tong,

S. F. Yoon,

YeeChia Yeo,

C. K. Chia,

Goutam Kumar Dalapati,

D. Z.

Publication year - 2013

Publication title -

apl materials

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.571

H-Index - 60

ISSN - 2166-532X

DOI - 10.1063/1.4820421

Subject(s) - materials science , diode , optoelectronics , germanium , resistive touchscreen , voltage , resistive random access memory , electrical engineering , silicon , engineering

We report the integration of one selection diode and one resistive-switching memory element (1D1R) structure based on a GaAs diode on germanium-on-insulator on a Si substrate integrated with Cr/TaOx/Al memory element. The 1D1R device showed unipolar resistive-switching with an ON/OFF resistance ratio of over 102 within the voltage range 1.1 V–2.0 V. In the low resistance state, a forward-to-reverse current ratio of 60 was obtained at ±1 V

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