Minority anion substitution by Ni in ZnO | Zendy

L. M. C. Pereira | Zendy; U. Wahl | Zendy; J. G. Correia | Zendy; L. M. Amorim | Zendy; D. J. Silva | Zendy; E. David-Bosne | Zendy; S. Decoster | Zendy; M. R. da Silva | Zendy; K. Temst | Zendy; A. Vantomme | Zendy

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Minority anion substitution by Ni in ZnO

Author(s) -

L. M. C. Pereira,

U. Wahl,

J. G. Correia,

L. M. Amorim,

D. J. Silva,

E. David-Bosne,

S. Decoster,

M. R. da Silva,

K. Temst,

A. Vantomme

Publication year - 2013

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.4820254

Subject(s) - dopant , magnetic semiconductor , doping , ion , materials science , semiconductor , lattice (music) , transition metal , substitution (logic) , crystallography , zinc , wide bandgap semiconductor , condensed matter physics , inorganic chemistry , chemical physics , chemistry , metallurgy , physics , optoelectronics , catalysis , biochemistry , organic chemistry , computer science , acoustics , programming language

We report on the lattice location of implanted Ni in ZnO using the beta(-) emission channeling technique. In addition to the majority substituting for the cation (Zn), a significant fraction of the Ni atoms occupy anion (O) sites. Since Ni is chemically more similar to Zn than it is to O, the observed O substitution is rather puzzling. We discuss these findings with respect to the general understanding of lattice location of dopants in compound semiconductors. In particular, we discuss potential implications on the magnetic behavior of transition metal doped dilute magnetic semiconductors. (C) 2013 AIP Publishing LLC

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