Iron-boron pair dissociation in silicon under strong illumination | Zendy

Xiaodong Zhu | Zendy; Deren Yang | Zendy; Xuegong Yu | Zendy; Jian He | Zendy; Yichao Wu | Zendy; Jan Vanhellemont | Zendy; Duanlin Que | Zendy

AI Assistant Blog Pricing

Home ZAIA Blog

Open Access

Iron-boron pair dissociation in silicon under strong illumination

Author(s) -

Xiaodong Zhu,

Deren Yang,

Xuegong Yu,

Jian He,

Yichao Wu,

Jan Vanhellemont,

Duanlin Que

Publication year - 2013

Publication title -

aip advances

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.421

H-Index - 58

ISSN - 2158-3226

DOI - 10.1063/1.4819481

Subject(s) - dissociation (chemistry) , silicon , boron , electron , materials science , electron bombardment , activation energy , chemical physics , atomic physics , chemistry , molecular physics , optoelectronics , physics , organic chemistry , quantum mechanics

The dissociation of iron-boron pairs (FeB) in Czochralski silicon under strong illumination was investigated. It is found that the dissociation process shows a double exponential dependence on time. The first fast process is suggested to be caused by a positive Fe in FeB capturing two electrons and diffusion triggered by the electron-phonon interactions, while the second slow one would involve the capturing of one electron followed by temperature dependent dissociation with an activation energy of (0.21 ± 0.03) eV. The results are important for understanding and controlling the behavior of FeB in concentrator solar cells

The content you want is available to Zendy users.

Already have an account? Click here to sign in.

Having issues? You can contact us here

Accelerating Research